doc. no : qw0905- rev. : b date : - 2006 29 - apr. data sheet LBD336D-XX LBD336D-XX bar digit led display ligitek electronics co.,ltd. property of ligitek only
note : 1.all dimension are in millimeters and (lnch) tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. 1/9 ligitek electronics co.,ltd. property of ligitek only package dimensions LBD336D-XX part no.page 6.4 (0.25") 2.54*6=15.24(0.6") 33.0(1.30") 11.0 (0.43") 11.0 (0.43") b d c a e LBD336D-XX ligitek pin no. 1 4.0 0.5 ? 0.45 typ 7.62 (0.3") y e g y g e
ligitek electronics co.,ltd. property of ligitek only internal circuit diagram part no. LBD336D-XX page2/9 bd c 7 11 12 5 3 10 9 13 g ab cdf e dp 4 2 14 6 e 8 a 1 LBD336D-XX
8. 10. 9. 7. 6. ligitek electronics co.,ltd. property of ligitek only electrical connection part no. 3. 4. 5. 2. 1. pin no. LBD336D-XX 3/9 page cathode a cathode c cathode c cathode d cathode d cathode e cathode dp common anode cathode a cathode b 11. cathode g 12. cathode e 13. 14. cathode f cathode b LBD336D-XX
common anode 4/9 page 30 e 120 100 mw ma ma unit symbol i f i fp pd parameter ligitek electronics co.,ltd. property of ligitek only ratings absolute maximum ratings at ta=25 forward current per chip power dissipation per chip peak forward current per chip (duty 1/10,0.1ms pulse width) 2:1 iv-m iv(mcd) vf(v) electrical typ. min. 12.8 7.2 typ. min. 2.1 1.7 2.6 max. t opr tstg 45 635 common cathode or anode p ( nm) (nm) chip emitted orange material -25 ~ +85 -25 ~ +85 note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. part selection and application information(ratings at 25) solder temperature 1/16 inch below seating plane for 3 seconds at 260 part no LBD336D-XX storage temperature operating temperature a 10 ir reverse current per any chip part no.LBD336D-XX y 20 80 60 g 100 120 30 yellow gaasp/gap 585351.72.12.612.821.5 gap green 565301.72.12.612.821.5 gaasp/gap
5/9 page ligitek electronics co.,ltd. property of ligitek only if=20ma test condition if=20ma if=20ma if=20ma volt vf unit nm a nm p iv mcd reverse current any chip spectral line half-width forward voltage per chip peak wavelength luminous intensity per chip parameter test condition for each parameter symbol luminous intensity matching ratio iv-m ir vr=5v part no.LBD336D-XX
3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature 1.0 r e l a t i v e i n t e n s i t y @ 2 0 m a 550 wavelength (nm) 500 0.0 0.5 600650700 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 40 20 060100 80 ambient temperature( ) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve part no. 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 10 1.0 y chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.0 6/9 page forward current(ma) 1.0101001000 LBD336D-XX
typical electro-optical characteristics curve page ligitek electronics co.,ltd. property of ligitek only part no. 7/9 3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature r e l a t i v e i n t e n s i t y @ 2 0 m a 600 wavelength (nm) 550 0.0 0.5 650700750 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 1.0 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 20 060 40100 80 100 20 ambient temperature( ) -20 -40 060 4080 3.0 2.5 2.0 1.5 1.0 0.5 0.0 fig.2 relative intensity vs. forward current 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 1.0 10 e chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.01000 forward current(ma) 1.010100 LBD336D-XX
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 g chip ligitek electronics co.,ltd. property of ligitek only typical electro-optical characteristics curve part no. page8/9 LBD336D-XX
page reference standard mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 mil-std-202:103b jis c 7021: b-11 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-883:1008 jis c 7021: b-10 jis c 7021: b-12 ligitek electronics co.,ltd. property of ligitek only mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 1.t.sol=260 5 2.dwell time= 10 1sec. this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. solder resistance test 1.t.sol=230 5 2.dwell time=5 1sec solderability test this test intended to see soldering well performed or not. this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. 1.under room temperature 2.if=10ma 3.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) thermal shock test high temperature high humidity test 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs high temperature storage test low temperature storage test operating life test the purpose of this test is the resistance of the device under tropical for hours. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. test condition part no. reliability test: test item description 9/9 LBD336D-XX
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